What is the application of reverse recovery characteristics?

Application of Reverse Recovery Characteristics

The reverse recovery characteristic has important applications in power electronics, especially in circuits involving high-speed switching operations. Here are some key applications of the reverse recovery characteristic:

Reduce power loss

In the switching process of power diodes and MOSFET body diodes, the reverse recovery characteristics directly affect switching losses. By optimizing the reverse recovery characteristics, significant reductions in power losses of switching devices, diodes, and other circuit components can be achieved.

Reduce voltage spikes and electromagnetic interference (EMI)

Proper selection of the flyback diode characteristics can reduce the voltage spikes, interference (I), and electromagnetic interference (EMI) caused by the flyback diode. This helps to minimize or even eliminate the absorption circuit, thereby enhancing the stability and reliability of the circuit.

Improve the safety of the circuit

The di/dt (change rate of reverse recovery current) during the reverse recovery process is crucial for the safety of the circuit. A lower di/dt can reduce the induced electromotive force (VRM-VR) in the circuit inductance, lowering the overshoot voltage and thus protecting the diode and switch devices.

Optimize high-frequency characteristics

In high frequency applications, the reverse recovery time (trr) is a critical parameter. A shorter reverse recovery time helps improve the high frequency characteristics of the device, which is particularly important for modern pulse circuits and high frequency rectifier applications.

High-pressure high-power application scenarios

Silicon carbide (SiC) diodes have significant advantages in high-voltage and high-power applications due to their superior reverse recovery characteristics. The reverse recovery time of SiC diodes is typically less than 20 ns, and even under certain conditions, it can be less than 10 ns, making them suitable for high-voltage and high-frequency fields.

Replace traditional silicon-based FRDs

With the development of technology, SiC diodes are gradually replacing traditional silicon-based fast recovery diodes (FRDs). SiC diodes not only have faster reverse recovery speeds but also solve the problem of low reverse breakdown voltage of silicon-based Schottky diodes, giving them significant advantages in high-voltage and high-frequency fields.

To sum up, the reverse recovery characteristics have a wide range of applications in power electronics, from reducing power losses to enhancing the safety and reliability of circuits, and optimizing high-frequency characteristics and high-voltage large-power application scenarios.