| Brand | Switchgear parts |
| Model NO. | Copper aluminum transition plate |
| Width | 63mm |
| Series | MG |
MG copper aluminum transition plate is a standardized conductive component designed to solve the connection problem of copper and aluminum conductors (such as busbars and equipment terminals) in power systems. It achieves reliable metallurgical bonding between copper and aluminum through special processes, which can avoid electrochemical corrosion caused by direct contact between copper and aluminum, and ensure low impedance current transmission. It is widely used in substations, distribution cabinets, new energy storage systems and other scenarios, and is a core component to ensure the safety and stability of copper aluminum conductor connections.
1、 Core Process and Structure: Ensuring Connection Reliability
The core value of MG copper aluminum transition plate lies in the stability of copper aluminum bonding, and its process selection and structural design directly determine its conductivity, corrosion resistance, and service life.
1. Core production process: realizing the metallurgical combination of copper and aluminum
As a standardized transition plate, the MG series mainly adopts flash butt welding or explosive welding processes, both of which can achieve atomic level bonding of copper and aluminum, avoiding the problems of "virtual connection" or "excessive contact resistance":
Flash welding process: Copper block (T2 purple copper, purity ≥ 99.9%) and aluminum block (1060 pure aluminum/6063 aluminum alloy) are heated to a plastic state by high-frequency current, and then subjected to axial pressure to fuse the two, forming a continuous metal bonding layer (thickness 50-100 μ m). This process has high production efficiency and high bonding strength (tensile strength ≥ 80MPa), suitable for medium and low voltage (≤ 35kV) and conventional current scenarios.
Explosive welding process: Using the high-pressure shock wave generated by explosive explosions, copper and aluminum plates collide at high speed within milliseconds, breaking the surface oxide film and achieving solid-state metallurgical bonding at the metal interface. The bonding layer is more uniform (thickness 100-200 μ m), with better impact resistance and fatigue resistance, lower contact resistance (≤ 5 μ Ω), suitable for high voltage (≥ 110kV) and high current (≥ 2000A) scenarios.
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